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Foundry develops RF GaN technology for MMICs

WIN Semiconductors announced the commercial release of NP25-20, a 50-V, 0.25-µm RF GaN platform for front-end applications. The Taiwanese pure-play semiconductor foundry’s process technology supports full MMICs, enabling customers to design linear or saturated high-power amplifiers, low-noise amplifiers, and single-chip front-end devices through 18 GHz (X- to Ku-Bands).

NP25-20 employs a source-coupled field plate for improved breakdown voltage and operates at a drain bias of 50 V. The technology is fabricated on 100-mm SiC substrates with through-wafer vias for low inductance ground.

At X-Band frequencies, NP25-20 demonstrates strong transmit and receive performance with saturated output power of 10 W/mm, 18-dB linear gain, and 60% power added efficiency. When biased for noise performance at 10 GHz, NP25-20 provides a minimum noise figure of 0.8 dB with 12-dB associated gain. This combination of power density and sub-1 dB noise figure enables high-performance single-chip front ends without sacrificing transmit power or receiver sensitivity.

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The NP25-20 GaN process technology targets such front-end applications as radio access networks, satellite communications, electronic warfare, and radar systems. Contact one of WIN’s regional sales offices for information about sample kits and foundry access.

WIN Semiconductors

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